ksa539 -0.2a , -60v pnp plastic encapsulated transistor elektronische bauelemente 07-dec-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 collector 1 emitter base 2 rohs compliant product a suffix of -c specifies halogen & lead-free feature low saturation medium current application. complementary to ksc815 classification of h fe product-rank KSA539-R ksa539-o ksa539-y range 40~80 70~140 120~240 absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -45 v emitter to base voltage v ebo -5 v collector current - continuous i c -200 ma collector power dissipation p c 400 mw thermal resistance from junction to ambient r ja 312 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -60 - - v i c = -0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo -45 - - v i c = -10ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -0.01ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -45v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -3v, i c =0 dc current gain h fe 40 - 240 v ce = -1v, i c = -50ma collector to emitter saturation voltage v ce(sat) - - -0.5 v i c = -150ma, i b = -15ma base to emitter saturation voltage v be(sat) - - -1.2 v i c = -150ma, i b = -15ma base to emitter voltage v be -0.6 - -0.9 v v ce = -1v, i c = -10ma to-92 1 11 1 emitter 2 22 2 base 3 33 3 collector ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76
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